Abstract | ||
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In this study, the mobility enhancement in an Amorphous Oxide Semiconductor Thin Film Transistor (AOS TFT), particularly the effect of enhanced-mobility current path was investigated. In the TFT structure, the a-IGZO single active channel layer was replaced by double layers. Indium Tin Oxide (ITO) was employed as an enhanced-mobility current path material and was embedded in an amorphous Indium Gallium Zinc Oxide (a-IGZO) channel layer of a conventional bottom gate structure TFT. To analyze the effect of the length of an additional current path, the a-IGZO channel length was fixed at 80μm, and the length of the ITO enhanced-mobility current path was increased to 20, 40, and 60μm. As a result, the mobility increased monotonically with the length of the enhanced-mobility current path and was predictable from the rule of mixture. The maximum saturation mobility of 28.3cm2/Vs resulted when the length of the enhanced-mobility current path was 60μm. This value is more than double that of a single path TFT. Such enhancement in mobility is attributed to the high conductivity of ITO and a good conduction band match between a-IGZO and ITO. |
Year | DOI | Venue |
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2012 | 10.1016/j.microrel.2012.02.012 | Microelectronics Reliability |
Field | DocType | Volume |
Conductivity,Oxide,Saturation (chemistry),Thin-film transistor,Electronic engineering,Indium gallium zinc oxide,Engineering,Semiconductor,Indium tin oxide,Amorphous solid | Journal | 52 |
Issue | ISSN | Citations |
7 | 0026-2714 | 2 |
PageRank | References | Authors |
0.77 | 0 | 2 |
Name | Order | Citations | PageRank |
---|---|---|---|
Myung Ju Kim | 1 | 2 | 0.77 |
Duck-kyun Choi | 2 | 2 | 1.11 |