Title
Refueling: Preventing Wire Degradation due to Electromigration
Abstract
Electromigration is a major source of wire and via failure. Refueling undoes EM for bidirectional wires and power/ground grids—some of a chip's most vulnerable wires. Refueling exploits EM's self-healing effect by balancing the amount of current flowing in both directions of a wire. It can significantly extend a wire's lifetime while reducing the chip area devoted to wires.
Year
DOI
Venue
2008
10.1109/MM.2008.92
IEEE Micro
Keywords
Field
DocType
chip area,bidirectional wire,ground grid,vulnerable wire,preventing wire degradation,major source,self-healing effect,refueling undoes em,current density,fault tolerance,chip,failure analysis,radiation detectors,electromigration,metals,reliability,transistors,testing
Particle detector,Current density,Computer science,Parallel computing,Design styles,Chip,Degradation (geology),Fault tolerance,Electromigration,Transistor,Electrical engineering
Journal
Volume
Issue
ISSN
28
6
0272-1732
Citations 
PageRank 
References 
9
0.78
3
Authors
6
Name
Order
Citations
PageRank
Jaume Abella1104676.34
Xavier Vera255230.31
Osman S. Unsal357555.65
Oguz Ergin442425.84
Antonio González53178229.66
James Tschanz6963121.38