Name
Abstract | ||
|---|---|---|
The influence of a weak magnetic field on the electric current across silicon P+N junctions has been studied. The theoretical analysis considers two types of diodes: diodes with short base and diodes with long base and the magnetic field is assumed to be perpendicular to the direction of the electric current across the junction. The results show that the variation of the current is directly related to the variation of the hole diffusion coefficient, which is then calculated in the approximation of a P-type silicon material. The relative variation of the diffusion coefficient was found B2 dependent. Experimental investigations have then been carried out in order to validate the theoretical calculations. The experimental results were in good agreement with the theoretical development when taking into account the two types of holes in the diffusion mechanism in silicon. |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1016/j.mejo.2005.04.053 | Microelectronics Journal |
Keywords | Field | DocType |
Magnetic field,P+N junction,Short base,Long base,Silicon,Hole diffusion | Magnetic field,Electric field,Diode,p–n junction,Electronic engineering,Engineering,Diffusion current,Condensed matter physics,Silicon,Semiconductor,Electric current | Journal |
Volume | Issue | ISSN |
37 | 2 | 0026-2692 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Idrissi-Benzohra | 1 | 1 | 1.79 |
| M. Abdelaoui | 2 | 0 | 1.01 |
| M. Benzohra | 3 | 2 | 2.53 |