Name
Abstract | ||
|---|---|---|
Laser- beam- induced- current ( LBIC) imaging is a nondestructive technique used for the characterization of the electrical structure within a semiconductor. In this paper a model is formulated for this technique using the standard drift- diffusion model, and, subsequently, an approximate version and its dual are derived for the study of the inverse problem. The formulation is then applied to a cross- sectional model for n - on- p devices of finite depth to study in detail the relation between the LBIC images and the device parameters. Numerical methods are developed for the simulation of the LBIC image of a diode as well as for the identification of parameters from the LBIC image by least- squares formulation. Numerical examples are presented to illustrate the success of identifying parameters such as junction depth, diffusion length, and equilibrium potential of an abrupt p - n junction diode from its LBIC image. The differentiability of the image with respect to the parameters also is established. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1137/S003613990139249X | SIAM JOURNAL ON APPLIED MATHEMATICS |
Keywords | Field | DocType |
semiconductor diodes,LBIC,drift-diffusion,parameter identification,inverse problems,elliptic partial differential equations/systems,discontinuous coefficients | Junction depth,Mathematical analysis,Diode,Differentiable function,Inverse problem,Numerical analysis,Semiconductor,Mathematics | Journal |
Volume | Issue | ISSN |
62 | 6 | 0036-1399 |
Citations | PageRank | References |
1 | 0.48 | 2 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| David A. Redfern | 1 | 1 | 0.82 |
| Kazufumi Ito | 2 | 833 | 103.58 |
| Weifu Fang | 3 | 26 | 5.48 |