Paper Info
Title
Shot Noise Modeling In Metal-Oxide-Semiconductor Field Effect Transistors Under Sub-Threshold Condition
Abstract
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing a two dimensional device simulator in conjunction with the shot noise model of a p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation results with measured noise data of p-n diodes. The intensity of shot noise in various n-MOSFET devices under various bias conditions was estimated beyond GHz operational frequency by using our simulation scheme. At DC or low-frequency region, sub-threshold current dominates the intensity of shot noise. Therefore, shot noise is independent on frequency in this region, and its intensity is exponentially depends on VG, proportional to L-1, and almost independent on V-D. At high-frequency region above GHz frequency, on the other hand, shot noise intensity depends on frequency and is much larger than that of low-frequency region. In particular, the intensity of the RF shot noise is almost independent on L, V-D and V-G. This suggests that high-frequency shot noise intensity of MOSFETs is decided only by the conditions of source-bulk junction.
Year
DOI
Venue
2007
10.1093/ietele/e90-c.4.885
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
MOSFET shot noise, high frequency noise, device simulation, sub-threshold current
Flicker noise,Noise (electronics),Optics,Image noise,Electronic engineering,Noise spectral density,Relative intensity noise,Engineering,Quantum noise,Noise generator,Shot noise
Journal
Volume
Issue
ISSN
E90C
4
0916-8524
Citations 
PageRank 
References 
1
0.48
0
Authors
6
Name
Order
Citations
PageRank
Yoshioki Isobe110.48
Kiyohito Hara210.48
Dondee Navarro333.90
Youichi Takeda410.48
Tatsuya Ezaki510.82
Mitiko Miura-Mattausch61116.18