Name
Abstract | ||
|---|---|---|
This work presents some results from electrical (TDDB, TLP, HBM and MM) measurements and ESD calculations/simulations on passive components such as capacitors. In a SIP context, the ESD sensitivity of innovative 3D capacitors is studied. A method to predict the failure threshold of a wide range of capacitor values under ESD events is presented and validated by measurement on silicon. This method consists of using the basic equation of the charge conservation for capacitors in parallel that is adapted to the model of the ESD event. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.microrel.2008.07.023 | Microelectronics Reliability |
Field | DocType | Volume |
Human-body model,Charge conservation,Capacitor,Electrostatic discharge,High density,Electronic engineering,Time-dependent gate oxide breakdown,Engineering,Electronic component,Silicon | Journal | 48 |
Issue | ISSN | Citations |
8 | 0026-2714 | 1 |
PageRank | References | Authors |
0.63 | 0 | 2 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Frederic Barbier | 1 | 1 | 0.63 |
| Sebastien Jacqueline | 2 | 1 | 0.63 |