Title
A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS
Abstract
Novel program and read schemes are presented to break barriers in scaling of NAND flash memory such as threshold voltage endurance from floating gate interference, and charge loss tolerance. To enhance threshold voltage endurance and charge loss tolerance, we introduced three schemes; MSB Re-PGM scheme, Moving Read scheme and Adaptive Code Selection scheme. Using the MSB Re-PGM scheme, threshold voltage distribution width is improved about 200 mV. The PGM throughput is enhanced from 1500 μs to 1250 μs. With the Moving Read scheme about half order of UBER is improved with 10 bit ECC. Also, Adaptive Code Selection scheme are used to decrease a current consumption. There is 5.5% current reduction. With these techniques, 32-Gb MLC NAND flash memory has been fabricated using a 32 nm CMOS process technology. Its program throughput reaches 13.0 MB/s at a multi-plane program operation with cache operation keeping a desirable threshold voltage distribution.
Year
DOI
Venue
2011
10.1109/JSSC.2010.2084450
IEEE Journal of Solid-state Circuits
Keywords
Field
DocType
nand circuits,adaptive code selection scheme,msb re-pgm scheme,cell-to-cell interference,moving read scheme,cmos process technology,threshold voltage endurance,endurance enhancing scheme,nand flash memory,msb re-program,cache operation,charge loss tolerance,adaptive code selection,nand flash,moving read,multiplane program operation,cmos logic circuits,size 32 nm,threshold voltage distribution width,floating gate interference,flash memories,couplings,threshold voltage,programming,interference,throughput
Logic gate,Flash memory,Computer science,CPU cache,CMOS,Electronic engineering,Memory management,Non-volatile memory,Electrical engineering,Threshold voltage,Integrated circuit
Journal
Volume
Issue
ISSN
46
1
0018-9200
Citations 
PageRank 
References 
13
3.99
3
Authors
25
Name
Order
Citations
PageRank
Changhyuk Lee1277.08
Sok-kyu Lee29523.78
Sung-Hoon Ahn36515.09
Jinhaeng Lee4134.67
Wonsun Park5134.33
Yongdeok Cho6134.33
Chaekyu Jang7134.33
Chulwoo Yang8134.67
Sang-Hwa Chung923448.13
In-Suk Yun10134.33
Byoungin Joo11134.33
Byoungkwan Jeong12134.33
Jeeyul Kim13134.33
Jeakwan Kwon14134.33
Hyunjong Jin15134.67
Yujong Noh16187.93
Jooyun Ha17134.33
Moonsoo Sung18175.60
Daeil Choi19134.33
Sang-Hwan Kim20429.21
Jeawon Choi21134.33
Taeho Jeon22134.33
Heejoung Park23226.53
Joong-Seob Yang24167.20
Yo-Hwan Koh25167.54