Title
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic.
Abstract
A first study of the BTI reliability of a 6Å EOT CMOS process for potential application in sub-threshold logic is presented. Considerable threshold voltage shifts are observed also for sub-threshold operation. The observed shifts convert to a remarkable current reduction due to the exponential dependence of current on Vth in this operating regime. Moreover, the pMOS is observed to degrade significantly more w.r.t. the nMOS device, inducing a detrimental Vth-imbalance. A proper device failure criterion is proposed, based on simulation of the DC robustness of an inverter logic circuit.
Year
DOI
Venue
2012
10.1016/j.microrel.2012.06.058
Microelectronics Reliability
Field
DocType
Volume
Inverter,Logic gate,Exponential function,NMOS logic,Electronic engineering,Cmos process,Robustness (computer science),Engineering,PMOS logic,Electrical engineering,Threshold voltage,Reliability engineering
Journal
52
Issue
ISSN
Citations 
9
0026-2714
1
PageRank 
References 
Authors
0.36
4
7
Name
Order
Citations
PageRank
Jacopo Franco12218.53
S. Graziano210.36
Ben Kaczer34912.50
Felice Crupi4258.33
L-Å Ragnarsson563.66
Tibor Grasser66812.77
Guido Groeseneken75923.15