Name
Abstract | ||
|---|---|---|
Self-consistent quantum modeling of GaN-based nanostructure are presented. The tight-binding approach is used to calculate optical properties while optimized effective mass approaches are used to obtain the output characteristics of GaN HEMT. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1155/2001/47013 | VLSI DESIGN |
Keywords | Field | DocType |
nanostructures,quantum modeling,GaN,HEMT,tight-binding polarization | Wide-bandgap semiconductor,Wurtzite crystal structure,Nitride,Polarization (waves),Quantum well,Optoelectronics,Stark effect,Heterojunction,Piezoelectricity,Physics | Journal |
Volume | Issue | ISSN |
13 | SP1-4 | 1065-514X |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| F. Sacconi | 1 | 0 | 0.68 |
| F. Della Sala | 2 | 0 | 0.68 |
| A. Di Carlo | 3 | 2 | 2.87 |
| Paolo Lugli | 4 | 124 | 19.26 |