Name
Abstract | ||
|---|---|---|
Paper presents results of the non-destructive characterization of porous SiC (PSiC) layers using atomic force microscope, Raman scattering, scanning electronic and X-ray diffraction spectroscopes. A comparative study of the Raman spectroscopy on the PSiC layers prepared at the different technological routine with the variation of the nanocrystallite sizes and the thickness of PSiC layers has shown a number of new features specific for nanocrystallite materials. The latter stimulates the modification of Raman scattering spectra, which have been discussed. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.mejo.2007.07.114 | Microelectronics Journal |
Keywords | Field | DocType |
different technological routine,raman scattering spectrum,psic layer,nanocrystallite size,raman spectroscopy,comparative investigation,comparative study,x-ray diffraction spectroscope,nanocrystallite material,atomic force microscope,structural property,porous sic,raman scattering,afm,sem,x ray diffraction | X-ray crystallography,Porosity,Optics,Spectrometer,Raman scattering,Spectral line,Engineering,Raman spectroscopy,Porous medium,Optoelectronics,Diffraction,Condensed matter physics | Journal |
Volume | Issue | ISSN |
39 | 3-4 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. M. Rodriguez | 1 | 0 | 0.34 |
| J. M. Rivas | 2 | 0 | 0.34 |
| A. D. Cano | 3 | 0 | 0.34 |
| T.V. Torchynska | 4 | 1 | 2.88 |
| J. P. Gomez | 5 | 0 | 0.34 |
| G. G. Gasga | 6 | 0 | 0.34 |
| S. J. Sandoval | 7 | 0 | 0.34 |
| M. Mynbaeva | 8 | 0 | 0.68 |