Paper Info
Title
Investigation of the Effect of Operating Temperature on Electrical Characteristics of A-Si: H/a-SiGe: H Hetero-Structure Solar Cells
Abstract
In this work the temperature dependence of the electrical behavior of the amorphous silicon thin film hetero-structure solar cells such as potential and electric field and the effect of temperature on the recombination rate and photo-generation rate, through the cell is investigated. Also the effect of the various p-layer doping concentrations with temperature variation on the electrical characteristic of the solar cell such as short circuit current, open circuit voltage and efficiency are studied in this work. Based on the results optimum structures for single and double junction amorphous silicon solar cells are obtained. After optimizing the parameters of i-layer and p-layer of solar cell a double-junction solar cell with JSC=265A/m2, VOC=1.13V, FF=0.795, and efficiency of 23.5% has been achieved at T=300 K.
Year
DOI
Venue
2011
10.1109/EMS.2011.22
Computer Modeling and Simulation
Keywords
Field
DocType
double-junction solar cell,electrical characteristic,solar cell,amorphous silicon,double junction amorphous silicon,temperature variation,electrical behavior,photo-generation rate,h hetero-structure solar cells,temperature dependence,open circuit voltage,operating temperature,electrical characteristics,electric field,thin films,thin film,short circuit current
Theory of solar cells,Amorphous silicon,Polymer solar cell,Short circuit,Solar cell,Thin film,Materials science,Optoelectronics,Solar cell efficiency,Open-circuit voltage
Conference
ISSN
ISBN
Citations 
2473-3539
978-1-4673-0060-5
0
PageRank 
References 
Authors
0.34
0
2
Name
Order
Citations
PageRank
Peyman Jelodarian100.34
Abdolnabi Kosarian201.35