Name
Abstract | ||
|---|---|---|
A smart power integrated circuit to be fabricated with standard CMOS technologies was developed in view to obtain a versatile, high performance and low cost basic building block, suitable for a wide range of low power applications. This circuit merges together two transistors, connected in a low-side/high-side switch configuration, with specific control and protection circuitries. These transistors are NMOS medium-voltage lateral structures, which use the lightly doped drain concept and are targeted to handle currents up to 2 A and to support 25 V at OFF state. Experimental results on different applications and topologies show the applicability of the smart switching cell on portable systems power supplies and amplifiers (up to 20 W). Its performance also proves the ability of standard CMOS technologies to implement smart power circuits. |
Year | DOI | Venue |
|---|---|---|
1995 | 10.1142/S021812669500028X | JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS |
Field | DocType | Volume |
Smart power,NMOS logic,Computer science,CMOS,Electronic engineering,Network topology,Transistor,Electronic circuit,Electrical engineering,Integrated circuit,Amplifier | Journal | 5 |
Issue | ISSN | Citations |
3 | 0218-1266 | 1 |
PageRank | References | Authors |
1.69 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Saulo Finco | 1 | 5 | 4.43 |
| F. H. Behrens | 2 | 2 | 3.27 |
| Jorge Guilherme | 3 | 47 | 9.57 |
| M. I. Castro Simas | 4 | 1 | 1.69 |
| Mário Lança | 5 | 2 | 2.08 |