Name
Title | ||
|---|---|---|
A Highly Linear Gilbert Cell Ota With Multiple Gated Transistors For Non-Coherent Uwb Receivers |
Abstract | ||
|---|---|---|
This paper presents a highly linear Gilbert cell OTA by cancelling the second order transconductance derivative (gm")of nMOS transistors near threshold voltage using the technique of multiple gated transistors. This gives rise to 5 dB improvement in IIP3 of OTA, using a 0.13 mu m CMOS technology with 1.2V supply. Simulation results and analytical relations for THD and IIP3 in OTA illustrate the tradeoffs between linearity, bandwidth, and power dissipation. System level simulation of a non-coherent UWB receiver, with this OTA as a Gm-C integrator in receiver structure, illustrates an improvement of BER from 3e(-2) to 1e(-3). The power consumption, IIP3, and transconductance in OTA are 0.62mW, 20.5 dBm, and 156 mu A/V, respectively. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1587/elex.6.756 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
CMOS OTA, linearization, multiple gated transistors | Non coherent,Computer science,Electronic engineering,Transistor,Linearization,Gilbert cell | Journal |
Volume | Issue | ISSN |
6 | 11 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mostafa Yargholi | 1 | 12 | 4.70 |
| Abdolreza Nabavi | 2 | 47 | 17.09 |