Paper Info
Title
Non-quasi-static modeling/implementation of BJT current crowding for seminumerical mixed-mode device/circuit simulation
Abstract
An non-quasi-static (NQS) model for transient current crowding in advanced bipolar junction transistors (BJTs) is presented. The model, which characterizes a time-dependent effective bias on the emitter-base junction in a seminumerical analysis, is intended for circuit simulation and has been implemented in MMSPICE. The novel modeling/implementation is based on the use of the previous time-step analysis, which is fact could allow general accounting for NQS effects in seminumerical mixed-mode device/circuit simulation. Demonstrative simulations, supported by purely numerical ones, show that, for the BJT switch-on transient, the NQS current crowding causes an added delay and tends to become insignificant only when the emitter width (WE) is scaled to deep-submicron values and that, for the switch-off transient, the added delay is negligible, at least for WE<2 μm
Year
DOI
Venue
1992
10.1109/43.137521
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Keywords
DocType
Volume
previous time-step analysis,semiconductor device models,mixed-mode device/circuit simulation,bipolar junction transistors,switch-off transient,MMSPICE,seminumerical simulation,non-quasi-static modeling,seminumerical mixed-mode device,emitter-base junction,time-dependent effective bias,switch-on transient,bipolar transistors,circuit analysis computing,bjt current crowding,seminumerical analysis,nqs effect,nqs current crowding,transient current crowding,nonquasi static model,transient response,demonstrative simulation,advanced bipolar junction transistor,added delay,BJT current crowding,circuit simulation
Journal
11
Issue
ISSN
Citations 
6
0278-0070
0
PageRank 
References 
Authors
0.34
0
2
Name
Order
Citations
PageRank
J. Jin100.34
J. G. Fossum212.32