Name
Abstract | ||
|---|---|---|
In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1109/ISCAS.2012.6272023 | 2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) |
Keywords | Field | DocType |
wide band gap semiconductors,cmos integrated circuits,recovery time,low power electronics,zinc oxide,electrodes,sensitivity,response time | Cmos compatible,Wide-bandgap semiconductor,Computer science,Response time,CMOS,Electronic engineering,Degradation (geology),Fabrication,Electrode,Low-power electronics | Conference |
Volume | Issue | ISSN |
null | null | 0271-4302 |
Citations | PageRank | References |
0 | 0.34 | 3 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiaofang Pan | 1 | 0 | 0.34 |
| Xiaojin Zhao | 2 | 4 | 5.48 |
| Amine Bermak | 3 | 493 | 90.25 |
| Zhiyong Fan | 4 | 2 | 1.74 |