Name
Abstract | ||
|---|---|---|
We investigated the electronic structure of space-charge quantum wires produced through attachment of Si donors in misorientation steps of semiconductor vicinal surfaces of GaAs, by means of density functional theory, taking into account of residual acceptors. The coupled Schrödinger and Poisson equations were self-consistently solved in the frame of Thomas–Fermi, Hartree and local density approximation, respectively. We found that the one-dimensional electron gas strongly depends upon the dopant concentration and residual acceptors. A presence of residual acceptors in GaAs makes it impossible to grow δ-doped quantum wires. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2692(03)00090-9 | Microelectronics Journal |
Keywords | Field | DocType |
Density functional theory,Doping quantum wires,Local density approximation | Electronic structure,Vicinal,Local-density approximation,Fermi gas,Density functional theory,Electronic density,Engineering,Thomas–Fermi model,Semiconductor,Condensed matter physics | Journal |
Volume | Issue | ISSN |
34 | 5 | 0026-2692 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Marletta | 1 | 0 | 0.34 |
| F. Qu | 2 | 0 | 1.69 |
| N. O. Dantas | 3 | 0 | 2.03 |