Paper Info
Title
Flash Coding Scheme Based on Error-Correcting Codes
Abstract
Flash memory is a non-volatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block erasures are costly, traditional flash coding schemes have been developed to maximize the number of writes before a block erasure is needed. A novel coding scheme based on error-correcting codes allows the cell levels to increase as evenly as possibly and as a result, increases the number of writes before a block erasure. The scheme is also capable of combating noise in flash memories in order to enhance data reliability.
Year
DOI
Venue
2010
10.1109/GLOCOM.2010.5683364
IEEE Global Telecommunications Conference (Globecom)
Keywords
Field
DocType
Block-write,block erasure,controllable errors,error-correcting code,flash code
Flash memory,Computer science,Computer data storage,Parallel computing,Voltage,Data reliability,Coding (social sciences),Decoding methods,Computer hardware,Encoding (memory),Erasure
Conference
ISSN
Citations 
PageRank 
1930-529X
0
0.34
References 
Authors
7
3
Name
Order
Citations
PageRank
Qin Huang135534.55
Shu Lin223416.88
Khaled A. S. Abdel-Ghaffar3616122.03