Paper Info
Title
Towards automatic parameter extraction for surface-potential-based MOSFET models with the genetic algorithm
Abstract
In this paper, we present an automatic parameter extraction method with the GA (genetic algorithm) for surface-potential-based MOSFET models such as HiSIM (Hiroshima-university STARC IGFET Model). The method employs a two-stage extraction procedure operating on different sets of model parameters. Experimental results demonstrate that extraction of 34 parameters can be completed within 23 hours with PC (AthlonXP 2500), although this would typically take a human expert several days.
Year
DOI
Venue
2005
10.1109/ASPDAC.2005.1466158
ASP-DAC
Keywords
DocType
Volume
semiconductor device models,towards automatic parameter extraction,hisim,automatic parameter extraction,surface potential,23 hours,different set,hiroshima university starc igfet model,surface-potential-based mosfet models,hiroshima-university starc igfet model,model parameter,genetic algorithm,genetic algorithms,surface-potential-based mosfet model,human expert,two-stage extraction procedure operating,mosfet,automatic parameter extraction method,difference set,opc,yield,dissection
Conference
1
ISSN
ISBN
Citations 
2153-6961
0-7803-8736-8
4
PageRank 
References 
Authors
0.71
2
3
Name
Order
Citations
PageRank
Masahiro Murakawa121437.45
Mitiko Miura-Mattausch21116.18
Tetsuya Higuchi3905142.80