Title
A 0.13 Mu M Cmos Bluetooth Edr Transceiver With High Sensitivity Over Wide Temperature Range And Immunity To Process Variation
Abstract
A 2.4 GHz 0.13 mu m CMOS transceiver LSI, supporting Bluetooth V2.1 + enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between -40 degrees C and +90 degrees C. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of -90 dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13 mu m CMOS and operation at a low supply voltage of 1.5 V result in small area and low power consumption.
Year
DOI
Venue
2010
10.1587/transele.E93.C.803
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
CMOS wireless transceiver, Bluetooth, sensitivity, temperature compensation, phase noise, VCO pulling, MOS switch, leakage current
Transmitter,Low-noise amplifier,Transceiver,Voltage-controlled oscillator,Electronic engineering,CMOS,Engineering,Electrical engineering,Bluetooth,Local oscillator,Amplifier
Journal
Volume
Issue
ISSN
E93C
6
1745-1353
Citations 
PageRank 
References 
1
0.49
8
Authors
17