Title
A 60-GHz Outphasing Transmitter in 40-nm CMOS
Abstract
This paper presents the analysis, design, and implementation of a 60-GHz outphasing transmitter in 40-nm bulk CMOS. The 60-GHz outphasing transmitter is optimized for high output power and peak power-added efficiency (PAE) while maintaining sufficient linearity. The chip occupies an active area of 0.33 mm2 and consumes 217 mW from a 1-V supply voltage, delivering 15.6-dBm linear output power with 25% PAE (PA). It achieves a 500-Mb/s 16QAM modulation with 12.5-dBm average output power and 15% average efficiency (PA) at an EVM of -22 dB. Mismatch compensation and phase correction are applied to further improve the average output power and efficiency by about 1.6 dB and 4%, respectively.
Year
DOI
Venue
2012
10.1109/JSSC.2012.2216692
J. Solid-State Circuits
Keywords
Field
DocType
efficiency,average output power,cmos integrated circuits,phase correction,radio transmitters,60 ghz,wavelength 40 nm,poly-phase filter,power 217 mw,mixer,power amplifier,bulk cmos,16qam modulation,bit rate 500 mbit/s,millimeter-wave,voltage 1 v,peak power-added efficiency,quadrature amplitude modulation,transformer,linearization,frequency 60 ghz,outphasing transmitter,power combiner,linear output power,cmos,evm,mismatch compensation,power generation,baseband,millimeter wave,transmitters,bandwidth
Transmitter,Baseband,Quadrature amplitude modulation,Computer science,Linearity,Voltage,CMOS,Modulation,Electronic engineering,Electrical engineering,Amplifier
Journal
Volume
Issue
ISSN
47
12
0018-9200
Citations 
PageRank 
References 
16
1.27
15
Authors
3
Name
Order
Citations
PageRank
Dixian Zhao111918.35
Shailesh Kulkarni2233.48
Patrick Reynaert346376.50