Name
Title | ||
|---|---|---|
High-field step-stress and long term stability of PHEMTs with different gate and recess lengths |
Abstract | ||
|---|---|---|
The reliability of high power AlGaAs/InGaAs/GaAs PHEMTs has been investigated. The influences of high temperature and of elevated drain voltage have been studied separately, using long term operation at elevated temperature and a 23-hour drain-voltage step-stress at room temperature. Results pertaining to different combinations of gate length and gate-drain ledge are reported and discussed, indicating safe operation values and showing that a wider gate-drain recess increases the device reliability. (C) 2002 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1016/S0026-2714(02)00195-6 | Microelectronics Reliability |
Field | DocType | Volume |
Engineering physics,Electronic engineering,High field,Engineering | Journal | 42 |
Issue | ISSN | Citations |
9 | 0026-2714 | 1 |
PageRank | References | Authors |
0.44 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| P. Cova | 1 | 73 | 26.17 |
| R. Menozzi | 2 | 27 | 10.26 |
| M. Dammann | 3 | 1 | 0.78 |
| T. Feltgen | 4 | 1 | 0.44 |
| W. Jantz | 5 | 2 | 1.40 |