Title
Over 10-times high-speed, energy efficient 3D TSV-integrated hybrid ReRAM/MLC NAND SSD by intelligent data fragmentation suppression
Abstract
A 3D through-silicon-via (TSV)-integrated hybrid ReRAM/multi-level-cell (MLC) NAND solid-state drive's (SSD's) architecture is proposed with NAND-like interface (I/F) and sector-access overwrite policy for ReRAM. Furthermore, intelligent data management algorithms are proposed to suppress data fragmentation and excess usage of MLC NAND. As a result, 11-times performance increase, 6.9-times endurance enhancement and 93% write energy reduction are achieved. Both ReRAM write and read latency should be less than 3 μs to obtain these improvements. The required endurance for ReRAM is 105.
Year
DOI
Venue
2013
10.1109/ASPDAC.2013.6509566
ASP-DAC
Keywords
Field
DocType
nand circuits,endurance enhancement,random-access storage,write energy reduction,3d through-silicon-via-integrated hybrid reram/multi-level-cell nand solid-state drive architecture,three-dimensional integrated circuits,energy efficient 3d tsv-integrated hybrid reram/mlc nand ssd,reram write and read latency,intelligent data management algorithms,intelligent data fragmentation suppression,nand-like interface,sector-access overwrite policy,flash memories
Efficient energy use,Latency (engineering),Computer science,NAND gate,Fragmentation (computing),Real-time computing,Energy reduction,Computer hardware,Data management,Resistive random-access memory
Conference
ISSN
ISBN
Citations 
2153-6961
978-1-4673-3029-9
3
PageRank 
References 
Authors
0.46
0
6
Name
Order
Citations
PageRank
Chao Sun160.91
Hiroki Fujii2243.22
Kousuke Miyaji3599.73
Koh Johguchi4437.87
Kazuhide Higuchi5425.13
Ken Takeuchi6152.93