Title
A low-voltage 1Mb FeRAM in 0.13μm CMOS featuring time-to-digital sensing for expanded operating margin in scaled CMOS.
Year
DOI
Venue
2011
10.1109/ISSCC.2011.5746285
ISSCC
Keywords
Field
DocType
computer architecture,low voltage,low power electronics,sensors,feram,nonvolatile memory
Computer science,Voltage,CMOS,Electronic engineering,Non-volatile memory,Electronics,Low voltage,Ferroelectric RAM,Transistor,Electrical engineering,Low-power electronics
Conference
Citations 
PageRank 
References 
6
0.72
1
Authors
4
Name
Order
Citations
PageRank
Masood Qazi11159.10
Michael Clinton2449.26
Steven Bartling3173.22
Anantha P. Chandrakasan4144421946.93