Title
A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW.
Year
DOI
Venue
2011
10.1109/ISSCC.2011.5746415
ISSCC
Keywords
Field
DocType
semiconductor devices,phase change,low power electronics,programming,bandwidth
Flash memory,Computer science,Electronic engineering,Non-volatile memory,Bandwidth (signal processing),Scalability,Low-power electronics,Random access
Conference
Citations 
PageRank 
References 
36
5.01
2
Authors
35
Name
Order
Citations
PageRank
Hoeju Chung138428.25
Byung-Hoon Jeong2487.45
ByungJun Min3477.67
Youngdon Choi415012.50
Beak-Hyung Cho510332.97
Junho Shin615014.39
Jinyoung Kim712610.45
Jung Sunwoo813210.46
Joon-min Park96819.54
Qi Wang1016323.90
Yong-jun Lee111258.81
Soo-Ho Cha1235223.27
DukMin Kwon1335223.27
Sangtae Kim1414226.44
Sunghoon Kim15496.86
Yoohwan Rho161258.81
Mu-Hui Park1716323.90
Jaewhan Kim1814212.79
Ickhyun Song1912612.14
Sunghyun Jun20365.01
Jae-Wook Lee2126320.15
KiSeung Kim221258.81
Ki-won Lim236819.54
Won-ryul Chung246819.54
ChangHan Choi256819.54
HoGeun Cho26365.01
In-Chul Shin27365.35
Woochul Jun28365.01
Seokwon Hwang298114.51
Ki-Whan Song30589.66
Kwang-jin Lee3119127.94
Sang-whan Chang32365.01
Woo-Yeong Cho337420.10
Jeihwan Yoo3438129.63
Young-Hyun Jun35365.01