Name
Abstract | ||
|---|---|---|
In this paper we analyze the possibility of creating a universal non-volatile memory in a near future. Unlike DRAM and flash memories a new universal memory should not require electric charge storing, but alternative principles of information storage. For the successful application a new universal memory must also exhibit low operating voltages, low power consumption, high operation speed, long retention time, high endurance, and a simple structure. Several alternative principles of information storage are reviewed. We discuss different memory technologies based on these principles, highlight the most promising candidates for future universal memory, make an overview of the current state-of-the-art of these technologies, and outline future trends and possible challenges by modeling the switching process. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1016/j.microrel.2011.10.020 | Microelectronics Reliability |
Field | DocType | Volume |
Dram,Computer science,Voltage,Universal memory,Information storage,Electronic engineering,Electrical engineering,Power consumption | Journal | 52 |
Issue | ISSN | Citations |
4 | 0026-2714 | 10 |
PageRank | References | Authors |
0.79 | 3 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Makarov | 1 | 10 | 3.16 |
| Viktor Sverdlov | 2 | 12 | 4.70 |
| Siegfried Selberherr | 3 | 105 | 39.95 |