Name
Abstract | ||
|---|---|---|
This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 similar to 47.5 times faster page update time with one overwrite allowance and 1.3 similar to 18.7 with four overwrites allowance compared with conventional method. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1587/elex.10.20130039 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
NAND flash memory, single level cell, multi-level cell, overwrite, write performance | Nand flash memory,Multi-level cell,Flash file system,Computer science,NAND gate,Computer hardware,Performance improvement | Journal |
Volume | Issue | ISSN |
10 | 6 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 3 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Samkyu Won | 1 | 0 | 0.34 |
| Eui-Young Chung | 2 | 635 | 71.51 |
| DuckJu Kim | 3 | 4 | 1.75 |
| Junseop Chung | 4 | 2 | 0.73 |
| Bong-Seok Han | 5 | 2 | 1.41 |
| Hyuk-Jun Lee | 6 | 29 | 10.20 |