Name
Title | ||
|---|---|---|
A Low Power And Area Scalable High Voltage Switch Technique For Low Operation Voltage In Mlc Nand Flash Memory |
Abstract | ||
|---|---|---|
A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1587/transele.E93.C.182 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
NAND, FLASH, row decoder, high voltage switch, low voltage, area scaling, low power | Flash memory,Leakage (electronics),Voltage,Electronic engineering,NAND gate,Non-volatile memory,Low voltage,Engineering,High voltage,Low-power electronics | Journal |
Volume | Issue | ISSN |
E93C | 2 | 0916-8524 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Myounggon Kang | 1 | 9 | 5.59 |
| Ki-Tae Park | 2 | 197 | 19.35 |
| Youngsun Song | 3 | 1 | 1.37 |
| Sungsoo Lee | 4 | 21 | 6.62 |
| Yunheub Song | 5 | 8 | 2.34 |
| Young-Ho Lim | 6 | 81 | 17.55 |