Title
Simulation And Design Of Nanocircuits With Resonant Tunneling Devices
Abstract
New nanotechnology-based devices are being researched to replace CMOS devices in order to overcome CMOS technology's scaling limitations. However, many such devices exhibit nonmonotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes two new circuit simulation approaches that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance problem. A new tool called NanoSim-RTD is developed has ed on the proposed new simulation techniques. The experimental results show a speedup of 1.48-37.1 times when compared with existing simulators. Further, this paper demonstrates a new way to design delay-insensitive nanocircuits, and the designs can be verified by using NanoSim-RTD.
Year
DOI
Venue
2007
10.1109/TCSI.2007.895529
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
Keywords
Field
DocType
asynchronous, bias-based, resonant tunneling devices, stepwise equivalent conductance
Quantum tunnelling,Asynchronous communication,CMOS,Electronic engineering,Integrated circuit design,Engineering,Chaotic,Electrical engineering,Scaling,Speedup
Journal
Volume
Issue
ISSN
54
6
1549-8328
Citations 
PageRank 
References 
4
0.49
9
Authors
5
Name
Order
Citations
PageRank
Janet Meiling Wang111814.10
Bharat Sukhwani222815.95
Uday Padmanabhan390.97
Dongsheng Ma415724.75
Kartik Sinha540.49