Name
Abstract | ||
|---|---|---|
We have recently demonstrated a new device named Z2-FET (zero subthreshold swing and zero impact ionization) and proposed it as a 1-transistor DRAM. The device is built on an FD-SOI substrate and operates by feedback between carrier flows and injection barriers. We now present additional results obtained from extensive experiments and simulations. Experimentally, the ION/IOFF ratio exceeds 109 and supply voltage (VDD) scales down to 1.1 V with the DRAM retention time as high as 0.15 s at 75°C. In simulation, the access time reaches below 1 ns and the Z2-FET can be scaled down to 30 nm. We also discuss various operation modes. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1109/ESSDERC.2012.6343367 | ESSDERC |
Keywords | DocType | ISSN |
zero impact ionization,FD-SOI substrate,DRAM chips,zero subthreshold swing,feedback,1-transistor high-speed DRAM,silicon-on-insulator,carrier flows,field effect transistors,supply voltage,impact ionisation,Z2-FET,DRAM retention time,injection barriers | Conference | 1930-8876 E-ISBN : 978-1-4673-1706-1 |
ISBN | Citations | PageRank |
978-1-4673-1706-1 | 0 | 0.34 |
References | Authors | |
0 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jing Wan | 1 | 0 | 0.34 |
| Cyrille Le Royer | 2 | 0 | 0.34 |
| Alexander Zaslavsky | 3 | 0 | 0.34 |
| Sorin Cristoloveanu | 4 | 3 | 6.73 |