Title
Modulation coding for flash memories
Abstract
The aggressive scaling down of flash memories has threatened data reliability since the scaling down of cell sizes gives rise to more serious degradation mechanisms such as cell-to-cell interference and lateral charge spreading. The effect of these mechanisms has pattern dependency and some data patterns are more vulnerable than other ones. In this paper, we will categorize data patterns taking into account degradation mechanisms and pattern dependency. In addition, we propose several modulation coding schemes to improve the data reliability by transforming original vulnerable data patterns into more robust ones.
Year
DOI
Venue
2013
10.1109/ICCNC.2013.6504220
ICNC '13 Proceedings of the 2013 International Conference on Computing, Networking and Communications (ICNC)
Keywords
DocType
Volume
cell size,serious degradation mechanism,data pattern,lateral charge,account degradation mechanism,cell-to-cell interference,flash memory,modulation coding,original vulnerable data pattern,pattern dependency,data reliability
Journal
abs/1304.4811
Citations 
PageRank 
References 
7
0.53
6
Authors
7
Name
Order
Citations
PageRank
Jun Jin Kong1515.83
Hongrak Son2224.75
Jaejin Lee31760126.06
Jaehong Kim438341.59
Kyoung Lae Cho570.87
B. V. K. Vijaya Kumar670.87
Yongjune Kim7548.76