Name
Abstract | ||
|---|---|---|
For deep submicron MOSFET's short-channel effects dominate the transistor characteristics. We present here a new analytical MOSFET model for circuit simulation which includes these effects. The model is based on the charge-sheet approximation including the drift and the diffusion contributions. Additionally the model includes the contribution of the lateral electric field explicitly. Therefore it enables the calculation of the transistor characteristics, i.e., the drain current and the channel conductance, for all channel lengths down to a quarter-micron with one parameter set with high accuracy. Due to the physically consistent treatment of the model, a drastic reduction in the number of model parameters has been realized |
Year | DOI | Venue |
|---|---|---|
1994 | 10.1109/43.277634 | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |
Keywords | DocType | Volume |
analytical MOSFET model,semiconductor device models,consistent treatment,channel length,lateral electric field,circuit analysis computing,channel conductance,insulated gate field effect transistors,model parameter,new analytical mosfet model,drain current,short-channel effects,quarter micron technology,quarter micron technologies,transistor characteristics,analytical mosfet model,transistor characteristic,deep submicron MOSFET,charge-sheet approximation,diffusion contribution,deep submicron,circuit simulation,carrier mobility | Journal | 13 |
Issue | ISSN | Citations |
5 | 0278-0070 | 2 |
PageRank | References | Authors |
1.23 | 1 | 1 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Miura-Mattausch | 1 | 9 | 4.24 |