Name
Title | ||
|---|---|---|
A compact model for early electromigration failures of copper dual-damascene interconnects. |
Abstract | ||
|---|---|---|
A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression, from where a statistical distribution can be conveniently obtained. Furthermore, it is shown that the simulation results provide a reasonable estimation for the lifetimes. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1016/j.microrel.2011.07.049 | Microelectronics Reliability |
Keywords | Field | DocType |
copper,electromigration,biomedical research,statistical distribution,bioinformatics | Void nucleation,Copper interconnect,Electronic engineering,Engineering,Void (astronomy),Electromigration,Optoelectronics,Electrical engineering,Copper | Journal |
Volume | Issue | ISSN |
51 | 9 | 0026-2714 |
Citations | PageRank | References |
6 | 1.51 | 1 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| R.L. de Orio | 1 | 25 | 4.03 |
| Hajdin Ceric | 2 | 20 | 6.01 |
| Siegfried Selberherr | 3 | 105 | 39.95 |