Name
Abstract | ||
|---|---|---|
Zr-N thin films as a barrier in Cu/Si contact were investigated. The Cu/Zr-N/Si specimens were prepared and annealed at temperatures up to 700^oC in N"2 ambient for an hour. Characterization of phase composition and crystallite structure of the barriers was performed by XRD, the film morphology was examined using atomic force microscopy (AFM), and the composition profiles of the as-deposited and annealed samples of Cu/Zr-N/Si were identified by Auger electron spectroscopy (AES). It is evident that the Zr-N film structure is very sensitive to the deposition conditions. Cu/Zr-N/Si contact systems showed better thermal stability so that the Cu"3Si phase could not be detected. It is indicated from the comparison analysis results that the Zr-N film showed better thermal stability with increasing N"2 flow ratio and/or negative substrate bias. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1016/j.mejo.2007.06.001 | Microelectronics Journal |
Keywords | Field | DocType |
zr-n film structure,si specimen,cu metallization,thermal stability,zr-n film,si contact,composition profile,diffusion barrier,si contact system,zr-n thin film,annealed sample,film morphology,atomic force microscopy,thin film,semiconductor,auger electron spectroscopy | X-ray crystallography,Analytical chemistry,Crystallite,Deposition (law),Diffusion barrier,Annealing (metallurgy),Thermal stability,Engineering,Thin film,Auger electron spectroscopy,Nuclear magnetic resonance,Condensed matter physics | Journal |
Volume | Issue | ISSN |
38 | 8-9 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ying Wang | 1 | 394 | 78.74 |
| Fei Cao | 2 | 0 | 0.34 |
| Minghui Ding | 3 | 0 | 0.68 |
| Dawei Yang | 4 | 6 | 2.79 |