Name
Abstract | ||
|---|---|---|
Light emission in a novel HEMT-like structure was observed under conditions of strong reverse bias on the Schottky gate with a positive bias on the drain. Two distinct regions of light emission are present in the device with emission of red shaded light at the drain side of the gate and off-white color emission at the drain. These two distinct colors are clearly visible with the use of a microscope. The bias levels under which light emission occurs approach those necessary for catastrophic device breakdown. In the continuation of the study, spectroscopy of the emitted light is planned. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1016/j.mejo.2007.09.002 | Microelectronics Journal |
Keywords | Field | DocType |
light emission,strong reverse bias,distinct color,red shaded light,catastrophic device breakdown,positive bias,drain side,off-white color emission,semiconductor triode,schottky gate,bias level,hemt,breakdown | Reverse bias,Schottky gate,Triode,Optics,Microscope,Engineering,Spectroscopy,High-electron-mobility transistor,Optoelectronics,Semiconductor,Light emission | Journal |
Volume | Issue | ISSN |
38 | 12 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| S. Mil'shtein | 1 | 7 | 5.39 |
| J. Palma | 2 | 0 | 0.34 |
| C. Liessner | 3 | 0 | 0.68 |
| C. Gil | 4 | 0 | 0.34 |