Name
Abstract | ||
|---|---|---|
This paper presents measurement of on-chip coupling between PA and LNA integrated on Si CMOS substrate, which is caused by substrate coupling, magnetic coupling, power-line coupling, etc. These components are decomposed by measurements using diced chips. The result reveals that the substrate coupling is the most dominant in CMOS chips and the total isolation becomes less than -50 dB with more than 0.4 mm PA-to-LNA distance. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1587/transele.E94.C.1057 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
CMOS, power amplifier, substrate coupling, Tx leakage, mutual coupling | Substrate (chemistry),Low-noise amplifier,Coupling,Inductive coupling,CMOS,Electronic engineering,Substrate coupling,Power electronics,Engineering,Electrical engineering,Amplifier | Journal |
Volume | Issue | ISSN |
E94C | 6 | 0916-8524 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ryo Minami | 1 | 85 | 8.62 |
| Jee Young Hong | 2 | 0 | 1.01 |
| Kenichi Okada | 3 | 497 | 100.11 |
| Akira Matsuzawa | 4 | 465 | 88.10 |