Name
Abstract | ||
|---|---|---|
We propose a simple, noninvasive, optical technique to measure intra-wafer and intra-chip MOSFET performance variations. Technique utilizes correlation between device performance and weak near-infrared emission from its off-state current. It maps performance variations, producing quantitative data. We experimentally demonstrate our technique on 130 nm SOI microprocessor. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1016/j.microrel.2005.07.031 | Microelectronics Reliability |
Keywords | Field | DocType |
near infrared,chip | Silicon on insulator,Wafer,Microprocessor,Chip,Electronic engineering,Engineering,Microscopy,MOSFET,Infrared,Integrated circuit | Journal |
Volume | Issue | ISSN |
45 | 9 | 0026-2714 |
Citations | PageRank | References |
6 | 2.84 | 1 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Stas Polonsky | 1 | 6 | 3.86 |
| M. Bhushan | 2 | 6 | 2.84 |
| A. Gattiker | 3 | 6 | 2.84 |
| A. Weger | 4 | 6 | 3.18 |
| Peilin Song | 5 | 302 | 49.35 |