Name
Abstract | ||
|---|---|---|
We report in this study the modeling of a heterostructure bipolar transistor (HBT) where the base is designed as a quantum well. The transistor structure consists of a base layer of GaAs that is heavily p-type doped. The 0.024@mm base is sandwiched between wide band gap In"xGa"1"-"xP which composes the n-type emitter and collector layers immediately adjacent to the base. The thickness of the base was chosen so that it is comparable to the wavelength of the electrons passing though it. There are two heavily doped cap layers of InGaAs at the emitter contact. The remainder of the emitter and collector regions are composed of GaAs. The purpose of this design is to filter the energies and velocities of electrons as they pass through the base region that forms a quantum barrier to electrons and a quantum well to holes. This should result in a significant decrease of noise in comparison to that observed in non-quantum base HBTs. As expected, the thin quantum well improves the collection of injected carriers, which in turn boosts the DC gain (@b) to 750 and increases the power of the novel transistor by a factor of six, in comparison to a commercially available HBT with a similar non-quantum well structure. At high frequencies, the gain of the device is increased by about 5dB over the non-quantum base HBT that this device is based upon. Additionally, the cutoff frequency is improved from 20 to 50GHz. Modeling of the novel transistor was done using Silvaco ATLAS(TM). This study will continue with the fabrication of experimental wafers. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.mejo.2007.07.051 | Microelectronics Journal |
Keywords | Field | DocType |
non-quantum base hbts,thin quantum,quantum barrier,transistor structure,novel transistor,mm base,base layer,non-quantum base hbt,heterostructure bipolar transistor,base region,hbt,bipolar transistor,band gap,quantum well,high gain,high frequency | Common emitter,Electronic engineering,Bipolar junction transistor,Engineering,Heterojunction bipolar transistor,Transistor,Heterojunction,Quantum well,Semiconductor,Heterostructure-emitter bipolar transistor | Journal |
Volume | Issue | ISSN |
39 | 3-4 | Microelectronics Journal |
Citations | PageRank | References |
1 | 0.41 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| S. Mil'shtein | 1 | 7 | 5.39 |
| A. Churi | 2 | 1 | 1.09 |
| J. Palma | 3 | 1 | 0.41 |