Title
Read disturb on flash memories: Study on temperature annealing effect.
Abstract
New technology development is highlighting the role of stress relaxation inside the semiconductor reliability evaluation. In present paper we focus on the read disturb failure mode, starting from the known model and analysing the impact of stress relaxation on the reliability evaluation. Particular focus has been placed on the infant mortality screening and Burn-In role that is fundamental, especially for an automotive market.
Year
DOI
Venue
2012
10.1016/j.microrel.2012.06.086
Microelectronics Reliability
Field
DocType
Volume
Technology development,Stress relaxation,Failure mode and effects analysis,Automotive market,Electronic engineering,Engineering,Reliability engineering
Journal
52
Issue
ISSN
Citations 
9
0026-2714
2
PageRank 
References 
Authors
0.41
1
5
Name
Order
Citations
PageRank
L. Cola130.77
M. De Tomasi220.41
R. Enrici Vaion321.08
A. Mervic431.45
P. Zabberoni541.25