Paper Info
Title
The analysis of I–V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height
Abstract
The current–voltage (I–V) characteristics of Al/p-Si Schottky barrier diode (SBD) with native insulator layer were measured in the temperature range of 178–440K. The estimated zero-bias barrier height ΦB0 and the ideality factor n assuming thermionic emission (TE) theory have shown strong temperature dependence. Evaluation of the forward I–V data have revealed an increase of zero-bias barrier height ΦB0 but the decrease of ideality factor n with the increase in temperature. The experimental and theoretical results of the tunneling current parameter Eo against kT/q were plotted to determine predominant current-transport mechanism. But the experimental results were found to be disagreement with the theoretical results of the pure TE, the thermionic-field emission (TFE) and the field emission (FE) theories. The conventional Richardson plot has exhibited non-linearity below 240K with the linear portion corresponding to the activation energy of 0.085eV and Richardson constant (A*) value of 2.48×10−9Acm−2K−2 which is much lower than the known value of 32Acm−2K−2 for holes in p-type Si. Such behaviours were attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneities that prevail at interface. Thus, the modified ln(Io/T2)−q2σo2/2k2T2 vs q/kT has plotted. Then A* was calculated as 38.79Acm−2K−2 without using the temperature coefficient of the barrier height. This value of the Richardson constant 38.79Acm−2K−2 is very close to the theoretical value of 32AK−2cm−2 for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I–V characteristics of the Al/p-Si Schottky barrier diodes with native insulator layer can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights.
Year
DOI
Venue
2011
10.1016/j.microrel.2010.08.017
Microelectronics Reliability
Keywords
Field
DocType
schottky barrier,field emission,activation energy,schottky diode,gaussian distribution
Schottky barrier,Thermionic emission,Atmospheric temperature range,Diode,Chemistry,Temperature coefficient,Electronic engineering,Schottky diode,Field electron emission,Schottky effect
Journal
Volume
Issue
ISSN
51
2
0026-2714
Citations 
PageRank 
References 
2
1.24
0
Authors
1
Name
Order
Citations
PageRank
İlbilge Dökme141.95