Name
Title | ||
|---|---|---|
Self-consistent calculations of the ground state and the capacitance of a 3D Si/SiO2 quantum dot |
Abstract | ||
|---|---|---|
We perform self-consistent electronic structure calculations in the frameworkof inhomogeneously and anisotropically scaled local density functional theoryof a fully 3D modeled Si/SiO 2 quantum dot. Electrons are laterally confinedin the semiconductor/oxide heterojunction by a metallic gate atop of thedevice. Total charge densities, total free energies, chemical potentials fordifferent numbers of electrons in the dot, and the differential capacitancesfor various dot sizes are... |
Year | DOI | Venue |
|---|---|---|
1998 | 10.1155/1998/86580 | VLSI Design |
Keywords | Field | DocType |
quantum dot,ground state,chemical potential,free energy,charge density | Molecular physics,Electronic structure,Capacitance,Quantum mechanics,Computer science,Electronic engineering,Density functional theory,Heterojunction,Quantum dot,Differential capacitance,Semiconductor,Carbon nanotube quantum dot | Journal |
Volume | Issue | Citations |
8 | 1-4 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| andreas scholze | 1 | 0 | 0.34 |
| andreas wettstein | 2 | 0 | 0.34 |
| A. Schenk | 3 | 6 | 4.24 |
| W. Fichtner | 4 | 289 | 36.60 |