Paper Info
Title
A Parallel Implementation of Electron-Phonon Scattering in Nanoelectronic Devices up to 95k Cores
Abstract
A quantum transport approach based on the Non-equilibrium Green's Function formalism and the tight-binding method has been developed to investigate the performances of atomistically resolved nanoelectronic devices in the presence of electron-phonon scattering. The model is integrated into a quad-level parallel environment (bias, momentum, energy, and spatial domain decomposition) that scales almost perfectly up to 220k cores in the ballistic limit of electron transport. In this case, the momentum and energy points form a quasi-embarrassingly parallel problem. The novelty in this paper is the inclusion of scattering self-energies that couple all the momenta and several energies together, requiring substantial inter-processor communication. An efficient parallel implementation of electron-phonon scattering is therefore proposed and applied to a realistically extended transistor structure. A good scaling of the simulation walltime up to 95,256 cores and a sustained performance of 142 TFlop/s are reported on the Cray-XT5 Jaguar.
Year
DOI
Venue
2010
10.1109/SC.2010.6
SC
Keywords
Field
DocType
nanoelectronic devices,parallel implementation,scattering self-energies,energy point,efficient parallel implementation,electron transport,electron-phonon scattering,cray-xt5 jaguar,quasi-embarrassingly parallel problem,quantum transport approach,quad-level parallel environment,function formalism,nanoelectronics,phonons,cores,scattering,transistors,tight binding,computational modeling,domain decomposition,semiconductor devices
Nanoelectronics,Phonon scattering,Computational physics,Computer science,Parallel computing,Phonon,Momentum,Scattering,Scaling,Domain decomposition methods,Electron
Conference
Citations 
PageRank 
References 
1
0.37
8
Authors
1
Name
Order
Citations
PageRank
Mathieu Luisier1568.55