Name
Title | ||
|---|---|---|
Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs |
Abstract | ||
|---|---|---|
A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric fields. However, the measure of the effects of the impact ionization related to the drain current during hot-electron stressing is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents, are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs. |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1016/j.microrel.2006.02.014 | Microelectronics Reliability |
Keywords | Field | DocType |
electric field,impact ionization | Electric field,Voltage,Impact ionization,Low noise,Electronic engineering,Engineering,High-electron-mobility transistor,Drain current,Electron,Drain-induced barrier lowering | Journal |
Volume | Issue | ISSN |
46 | 12 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hou-Kuei Huang | 1 | 0 | 1.01 |
| Cieh-Pin Chang | 2 | 0 | 0.34 |
| Mau-Phon Houng | 3 | 1 | 1.05 |
| Yeong-Her Wang | 4 | 8 | 4.94 |