Name
Abstract | ||
|---|---|---|
A dual-band LC voltage-controlled oscillator (VCO) architecture suitable for GSM/PCS/DCS applications is presented. The VCO utilizes a fourth-order resonance tank and avoids quality-factor-deteriorating switches. The paper outlines the design tradeoffs and the VCO when using a fourth-order resonator. The 0.8-GHz/1.8-GHz test chip was fabricated in the 0.5-mum IBM-5AM SiGe process and has achieved phase noise of -134 dBc/Hz at a 1-MHz frequency offset from the carrier, with 56-MHz and 121-MHz tuning ranges in the corresponding bands. The VCO core consumes 15 mW from a 2.5-V power supply |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/TCSII.2006.888732 | Circuits and Systems II: Express Briefs, IEEE Transactions |
Keywords | Field | DocType |
Ge-Si alloys,cellular radio,personal communication networks,resonators,silicon compounds,voltage-controlled oscillators,0.5 micron,0.8 to 1.8 GHz,1 MHz,121 MHz,15 mW,2.5 V,56 MHz,DCS,GSM,IBM-5AM,PCS,SiGe,dual-band LC VCO architecture,fourth-order resonance tank,fourth-order resonator,multiband VCO,quality-factor-deteriorating switches,root locus,Dual-band voltage-controlled oscillator (VCO),multiband VCO,root locus | Frequency offset,Resonator,Phase noise,Chip,Voltage-controlled oscillator,Electronic engineering,dBc,Electrical engineering,Silicon-germanium,Mathematics,Multi-band device | Journal |
Volume | Issue | ISSN |
54 | 3 | 1549-7747 |
Citations | PageRank | References |
1 | 0.37 | 6 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nikolay T. Tchamov | 1 | 17 | 7.82 |
| Svetozar S. Broussev | 2 | 10 | 2.27 |
| Ivan S. Uzunov | 3 | 1 | 0.37 |
| Kari K. Rantala | 4 | 1 | 0.37 |