Name
Abstract | ||
|---|---|---|
The experimental investigations on the concurrent PBTI and CHC degradation in n-channel MuGFETs have been performed with different stress gate voltages, gate lengths, fin widths, and side surface orientations of fin body. The observed results suggest that the enhanced hot carrier degradation at elevated temperature is due to the interaction between PBTI and CHC degradation. The stress gate voltage is a dominant role in CHC degradation at elevated temperature. The device degradation is independent of the fin number and fin width when the total fin width is constant. The device degradation is more significant in 0° rotated fin body than in 45° rotated fin body. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1016/j.microrel.2011.06.006 | Microelectronics Reliability |
Field | DocType | Volume |
Fin,Hot carrier degradation,Fin width,Voltage,Communication channel,Degradation (geology),Electronic engineering,Engineering,Gate voltage | Journal | 51 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Seung Min Lee | 1 | 58 | 12.14 |
| Dong Hun Lee | 2 | 10 | 4.19 |
| Jae Ki Lee | 3 | 0 | 0.34 |
| Jong-Tae Park | 4 | 144 | 34.45 |