Paper Info
Title
A Novel Filter Construction Utilizing Hts Reaction-Type Filter To Improve Adjacent Channel Leakage Power Ratio Of Mobile Communication Systems
Abstract
We propose a new hand selective stop filter construction to decrease the out of band intermodulation distortion (IMD) noise generated in the transmitting power amplifier. Suppression of IMD noise directly improves the adjacent channel leakage power ratio (ACLR). A high-temperature superconducting (FITS) device with extremely high-Q performance with very small hybrid IC pattern Would make it possible to implement the proposed filter construction as a practical device. To confirm the effectiveness of the HTS reaction-type filter (HTS-RTF) in improving ACLR, investigations based on both experiments and numerical analyses,ire carried out. The structure of a 5-GHz split open-ring resonator is investigated its targets include high-unload Q-factor, low Current densities. and low radiation. A designed 5-GHz HTS-RTF with 4 MHz Suppression bandwidth and more than 40 dB MHz(-1) sharp skirt is fabricated and experimentally investigated. The measured ACLR Values are improved by a maximum of 12.8 dB and are constant Lip to the passband signal power of 40 dBm. In addition. to examine the power efficiency improvement offered by noise Suppression of the HTS-RTF numerical analyses based oil measured results of gallium nitride HEMT power amplifier characteristics are conducted. The analyzed results shows the drain efficiency of the amplifier can be improved to 44.2% of the amplifier with the filter front the 15.7% of the without filter.
Year
DOI
Venue
2009
10.1587/transele.E92.C.307
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
adjacent channel leakage power ratio, high-temperature superconductor, intermodulation distortion, power handling capability, reaction-type filter
Electrical efficiency,Band-stop filter,Passband,Active filter,Adjacent channel,Electronic engineering,Bandwidth (signal processing),Intermodulation,Engineering,Amplifier
Journal
Volume
Issue
ISSN
E92C
3
1745-1353
Citations 
PageRank 
References 
1
0.43
0
Authors
6
Name
Order
Citations
PageRank
Shunichi Futatsumori122.94
Takashi Hikage253.54
Toshio Nojima3139.63
Akihiko Akasegawa422.41
Teru Nakanishi521.74
Kazunori Yamanaka663.34