Name
Abstract | ||
|---|---|---|
A novel nano electro mechanical system (NEMS) accelerated sensor was presented in this paper. The accelerated sensor is based on piezo-resistive effect of GaAs/AlAs/InGaAs Pseudomorph-High Electron Mobility Transistor (PHEMT). Piezo-resistive effect of Field Effect Transistor (FET) is analyzed, the structure of the sensor and its sensitive element are designed, and process is introduced. Abecedarian test is performed, and the test result shows that this NEMS accelerated sensor could sense exterior stress well. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1109/NEMS.2009.5068766 | NEMS |
Keywords | Field | DocType |
mechanical system,ingaas pseudomorph-high electron mobility,novel sensor,ingaas phemt,sensitive element,novel nano electro,test result,accelerated sensor,field effect,exterior stress,piezo-resistive effect,abecedarian test,stress,materials,accelerometer,logic gates,phemt,nanosensors,accelerometers,gaas,field effect transistor,piezoresistive effect,gallium arsenide,nems,etching | Gallium arsenide,Composite material,Field-effect transistor,Resistive touchscreen,High-electron-mobility transistor,Transistor,Nanoelectromechanical systems,Optoelectronics,Materials science,Electron mobility,Piezoresistive effect | Conference |
ISSN | Citations | PageRank |
2474-3747 | 1 | 0.48 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jing Cui | 1 | 39 | 13.93 |
| Bingzhen Zhang | 2 | 1 | 0.48 |
| Jun Liu | 3 | 51 | 22.99 |
| Chengyang Xue | 4 | 1 | 0.48 |
| Guowen Liu | 5 | 5 | 1.93 |
| Xiaojuan Jia | 6 | 1 | 1.16 |