Name
Abstract | ||
|---|---|---|
The impact of carrier pulling on the modulation characteristics of a transistor laser is discussed. The results of a theoretical analysis of modulation bandwidth and damping effect show that the carrier transport effect obtained by using a transistor laser allows for a gain compression factor of about one-tenth that of a conventional laser (0.7x10 (17) cm(3)), as well as for a maximum modulation bandwidth of 45 GHz. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/elex.9.1792 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
semiconductor laser, transistor laser, damping effect | Computer science,Transistor laser,Electronic engineering,Laser power scaling | Journal |
Volume | Issue | ISSN |
9 | 23 | 1349-2543 |
Citations | PageRank | References |
1 | 0.63 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mizuki Shirao | 1 | 1 | 1.30 |
| Nobuhiko Nishiyama | 2 | 2 | 4.63 |
| Noriaki Sato | 3 | 6 | 2.65 |
| Shigehisa Arai | 4 | 1 | 4.01 |