Title
A 13.56 Mhz Cmos Rf Identification Passive Tag Lsi With Ferroelectric Random Access Memory
Abstract
A radio frequency identification tag LSI operating with the carrier frequency of 13.56 MHz as well as storing nonvolatile information in embedded ferroelectric random access memory (FeRAM) has been developed. A full wave rectifier composed of PMOS transistor diodes and NMOS transistor switches achieves RF-to-DC power conversion efficiency over 54%. The entire 16 kbits write and read transaction time can be reduced to 2.1 see by the use of FeRAM, which corresponds to 2.2 times speed enhancement over conventional EEPROM based tag LSIs. The communication range of the FeRAM based tag LSI can be effectively improved by storing antitheft information in a ferroelectric nonvolatile flip-flop, which can reduce the power consumption of FeRAM from 27 mu W to 5 mu W. The communication range for the antitheft gate system becomes 70 cm.
Year
DOI
Venue
2005
10.1093/ietele/e88-c.4.601
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
radio frequency identification, wireless communication, non-volatile memory, ferroelectric random access memory, low power design
EEPROM,NMOS logic,CMOS,Electronic engineering,Non-volatile memory,Engineering,Ferroelectric RAM,Transistor,Integrated circuit,Electrical engineering,Low-power electronics
Journal
Volume
Issue
ISSN
E88C
4
1745-1353
Citations 
PageRank 
References 
3
0.86
0
Authors
2
Name
Order
Citations
PageRank
Shoichi Masui16317.88
Toshiyuki Teramoto230.86