Title | ||
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A memristor-based TCAM (ternary content addressable memory) cell: design and evaluation |
Abstract | ||
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This paper presents a Ternary Content Addressable Memory (TCAM) cell that employs memristors as storage element. The TCAM cell requires two memristors in series to perform the traditional memory operations (read and write) as well as the search and matching operations for TCAM; this memory cell is analyzed with respect to different features (such as transistor sizing and voltage threshold) of the memristors to process fast and efficiently the ternary data. A comprehensive simulation based assessment of this cell is pursued by HSPICE. |
Year | DOI | Venue |
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2012 | 10.1145/2206781.2206857 | ACM Great Lakes Symposium on VLSI |
Keywords | Field | DocType |
traditional memory operation,ternary content addressable memory,voltage threshold,different feature,comprehensive simulation,tcam cell,ternary data,memory cell,transistor sizing,memristor-based tcam,storage element,modeling,memristor,tcam | Memristor,Content-addressable memory,Ternary content addressable memory,Computer science,Voltage,Ternary operation,Transistor sizing,Computer hardware,Cell design,Memory cell | Conference |
Citations | PageRank | References |
6 | 0.55 | 7 |
Authors | ||
2 |
Name | Order | Citations | PageRank |
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Pilin Junsangsri | 1 | 28 | 5.78 |
Fabrizio Lombardi | 2 | 1985 | 259.25 |