Paper Info
Title
Distortion Compensation For Thermal Memory Effect On Ingap/Gaas Hbt Amplifier By Inserting Rc-Ladder Circuit In Base Bias Circuit
Abstract
An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.
Year
DOI
Venue
2010
10.1587/transele.E93.C.958
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
thermal memory effect, IMD, distortion compensation, self heating, power amplifiers, HBT
Self heating,Thermal,Heat flux,Electronic engineering,Engineering,Transistor,Heterojunction bipolar transistor,Distortion,Electrical engineering,Electrical reactance,Amplifier
Journal
Volume
Issue
ISSN
E93C
7
1745-1353
Citations 
PageRank 
References 
1
0.41
1
Authors
4
Name
Order
Citations
PageRank
Ryo Ishikawa187.74
Junichi KIMURA210.41
Yukio TAKAHASHI310.41
Kazuhiko Honjo41211.55